IPA50R280CE Tech Spezifikatioune
Infineon Technologies - IPA50R280CE technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPA50R280CE
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 350µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-31 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.2A, 13V | |
| Power Dissipation (Max) | 30.4W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 773 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 13V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | |
| Basis Produktnummer | IPA50R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPA50R280CE.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPA50R280CE | IPA50R190CE | IPA50R299CP | IPA50R280CEXKSA2 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ | CoolMOS™ CE |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-3-31 | PG-TO220-FP | PG-TO220-3-31 | PG-TO220-3-FP |
| Vgs (th) (Max) @ Id | 3.5V @ 350µA | 3.5V @ 510µA | 3.5V @ 440µA | 3.5V @ 350µA |
| Input Capacitance (Ciss) (Max) @ Vds | 773 pF @ 100 V | 1137 pF @ 100 V | 1190 pF @ 100 V | 773 pF @ 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 13V | 13V | 10V | 13V |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.2A, 13V | 190mOhm @ 6.2A, 13V | 299mOhm @ 6.6A, 10V | 280mOhm @ 4.2A, 13V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 18.5A (Tc) | 12A (Tc) | 7.5A (Tc) |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 30.4W (Tc) | 32W (Tc) | 104W (Tc) | 30.4W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Basis Produktnummer | IPA50R | IPA50R | - | IPA50R280 |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 10 V | 47.2 nC @ 10 V | 31 nC @ 10 V | 32.6 nC @ 10 V |
Eroflueden IPA50R280CE PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPA50R280CE - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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