IPA180N10N3G Tech Spezifikatioune
Infineon Technologies - IPA180N10N3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPA180N10N3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 35µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-111 | |
| Serie | OptiMOS™ 3 | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 28A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPA180N10N3G.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | IPA180N10N3G | IPA126N10N3G | IPA50R190CE | IPA15N65C3 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 500 V | - |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | - |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | 2500 pF @ 50 V | 1137 pF @ 100 V | - |
| Package protegéieren | Bulk | Bulk | Tube | - |
| Power Dissipation (Max) | 30W (Tc) | 33W (Tc) | 32W (Tc) | - |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 13V | - |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 35 nC @ 10 V | 47.2 nC @ 10 V | - |
| Supplier Device Package | PG-TO220-3-111 | PG-TO220-3-111 | PG-TO220-FP | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 28A, 10V | 12.6mOhm @ 35A, 10V | 190mOhm @ 6.2A, 13V | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Vgs (th) (Max) @ Id | 3.5V @ 35µA | 3.5V @ 45µA | 3.5V @ 510µA | - |
| Serie | OptiMOS™ 3 | OptiMOS™3 | CoolMOS™ | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Tc) | 35A (Tc) | 18.5A (Tc) | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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