IMBG120R220M1HXTMA1 Tech Spezifikatioune
Infineon Technologies - IMBG120R220M1HXTMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IMBG120R220M1HXTMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5.7V @ 1.6mA | |
Vgs (Max) | +18V, -15V | |
Technologie | SiCFET (Silicon Carbide) | |
Supplier Device Package | PG-TO263-7-12 | |
Serie | CoolSiC™ | |
Rds On (Max) @ Id, Vgs | 294mOhm @ 4A, 18V | |
Power Dissipation (Max) | 83W (Tc) | |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 800 V | |
Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 18 V | |
FET Typ | N-Channel | |
FET Feature | Standard | |
Entworf fir Source Voltage (Vdss) | 1200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | |
Basis Produktnummer | IMBG120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IMBG120R220M1HXTMA1.
Produktiounsattriff | ||||
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Part Number | IMBG120R220M1HXTMA1 | IMBF170R1K0M1XTMA1 | IMBH50D-060 | IMBF170R450M1XTMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Fujitsu Electronics America, Inc. | Infineon |
Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 18 V | 5 nC @ 12 V | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
FET Feature | Standard | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 800 V | 275 pF @ 1000 V | - | - |
Technologie | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
Vgs (th) (Max) @ Id | 5.7V @ 1.6mA | 5.7V @ 1.1mA | - | - |
FET Typ | N-Channel | N-Channel | - | - |
Serie | CoolSiC™ | CoolSiC™ | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 5.2A (Tc) | - | - |
Mounting Type | Surface Mount | Surface Mount | - | - |
Power Dissipation (Max) | 83W (Tc) | 68W (Tc) | - | - |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | - |
Basis Produktnummer | IMBG120 | IMBF170 | - | - |
Supplier Device Package | PG-TO263-7-12 | PG-TO263-7-13 | - | - |
Entworf fir Source Voltage (Vdss) | 1200 V | 1700 V | - | - |
Rds On (Max) @ Id, Vgs | 294mOhm @ 4A, 18V | 1000mOhm @ 1A, 15V | - | - |
Vgs (Max) | +18V, -15V | +20V, -10V | - | - |
Eroflueden IMBG120R220M1HXTMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IMBG120R220M1HXTMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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