IGW20N60H3 Tech Spezifikatioune
Infineon Technologies - IGW20N60H3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IGW20N60H3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | - | |
| Vce (on) (Max) @ Vge, Ic | - | |
| Test Condition | - | |
| Td (on / off) @ 25 ° C | - | |
| Energie schalten | - | |
| Supplier Device Package | - | |
| Reverse Recovery Time (trr) | - | |
| Power - Max | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | - | |
| Operatioun Temperatur | - | |
| Mounting Type | - | |
| Input Type | - | |
| IGBT Type | - | |
| Gate Charge | - | |
| Aktuell - Sammler Pulséiert (Icm) | - | |
| Aktuell - Sammler (Ic) (Max) | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IGW20N60H3.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | IGW20N60H3 | IGW15T120 | IGW30N60H3 | IGW25T120 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Reverse Recovery Time (trr) | - | - | - | - |
| Mounting Type | - | Through Hole | Through Hole | - |
| Energie schalten | - | 1.3mJ (on), 1.4mJ (off) | 940µJ (on), 440µJ (off) | - |
| Aktuell - Sammler Pulséiert (Icm) | - | 45 A | 120 A | - |
| Package / Case | - | TO-247-3 | TO-247-3 | - |
| Input Type | - | Standard | Standard | - |
| Test Condition | - | 600V, 15A, 56Ohm, 15V | 400V, 30A, 10.5Ohm, 15V | - |
| Vce (on) (Max) @ Vge, Ic | - | 2.2V @ 15V, 15A | 2.4V @ 15V, 30A | - |
| Aktuell - Sammler (Ic) (Max) | - | 30 A | 60 A | - |
| Voltage - Collector Emitter Breakdown (Max) | - | 1200 V | 600 V | - |
| Supplier Device Package | - | PG-TO247-3-21 | PG-TO247-3 | - |
| Operatioun Temperatur | - | -40°C ~ 150°C (TJ) | -40°C ~ 175°C (TJ) | - |
| Td (on / off) @ 25 ° C | - | 50ns/520ns | 21ns/207ns | - |
| Gate Charge | - | 85 nC | 165 nC | - |
| Power - Max | - | 110 W | 187 W | - |
| IGBT Type | - | - | Trench Field Stop | - |
IGW25T120Cypress Semiconductor (Infineon Technologies)IGBT ModuleIGW30N60TCypress Semiconductor (Infineon Technologies)IGBT ModuleIGW15N120H3FKSA1InfineonIGW08T120Cypress Semiconductor (Infineon Technologies)IGBT Module
IGW100N60H3IXYS / LittelfuseIGW30H603 G30H603Cypress Semiconductor (Infineon Technologies)IGW25T120FKSA1InfineonIGW15T120Infineon TechnologiesIGW15T120 - DISCRETE IGBT WITHOUIGW25N120H3FKSA1InfineonIGW15N120H3Cypress Semiconductor (Infineon Technologies)IGBT ModuleIGW30N60H3Infineon TechnologiesIGW30N60 - DISCRETE IGBT WITHOUTIGW30N60H3FKSA1IGW25T120 G25T120Cypress Semiconductor (Infineon Technologies)IGW15T120FKSA1IGW30N100T G30T100Cypress Semiconductor (Infineon Technologies)IGW30N100TCypress Semiconductor (Infineon Technologies)IGBT ModuleIGW15H120H3Cypress Semiconductor (Infineon Technologies)IGW25N120H3Cypress Semiconductor (Infineon Technologies)IGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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