IDP23E60 Tech Spezifikatioune
Infineon Technologies - IDP23E60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IDP23E60
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Viru (Vf) (Max) @ Wann | 2 V @ 23 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | PG-TO220-2-2 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 120 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 41A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | IDP23E |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IDP23E60.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IDP23E60 | IDP30E120XKSA1 | IDP30E60 | IDP40E65D2XKSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 600 V | 100 µA @ 1200 V | - | 40 µA @ 650 V |
| Package / Case | TO-220-2 | TO-220-2 | - | TO-220-2 |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 1200 V | - | 650 V |
| Supplier Device Package | PG-TO220-2-2 | PG-TO220-2-2 | - | TO-220-2 |
| Capacitance @ Vr, F. | - | - | - | - |
| Basis Produktnummer | IDP23E | IDP30E120 | - | IDP40E65 |
| Reverse Recovery Time (trr) | 120 ns | 243 ns | - | 75 ns |
| Technologie | Standard | Standard | - | Standard |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 150°C | - | -40°C ~ 175°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 41A | 50A | - | 40A |
| Voltage - Viru (Vf) (Max) @ Wann | 2 V @ 23 A | 2.15 V @ 30 A | - | 2.3 V @ 40 A |
| Package protegéieren | Tube | Tube | - | Tube |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
Eroflueden IDP23E60 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IDP23E60 - Infineon Technologies.
IDP2301-3Cypress Semiconductor (Infineon Technologies)IDP30E120XKSA1Infineon TechnologiesDIODE GP 1.2KV 50A TO220-2-2IDP2301Cypress Semiconductor (Infineon Technologies)IDP30E60Infineon TechnologiesIDP30E60 - SILICON POWER DIODEIDP40E65D2XKSA1Infineon TechnologiesDIODE GEN PURP 650V 40A TO220-2IDP2303AXUMA1InfineonIDP20E65D2XKSA1Infineon TechnologiesDIODE GP 650V 40A TO220-2-1IDP30E120 D30E120Cypress Semiconductor (Infineon Technologies)IDP2308Cypress Semiconductor (Infineon Technologies)IDP2303AInfineonIDP30E65D1Cypress Semiconductor (Infineon Technologies)IDP30C65D2Cypress Semiconductor (Infineon Technologies)
IDP30C65D2XKSA1Infineon TechnologiesDIODE 650V 30A RAPID2 TO220-3IDP18E120XKSA1InfineonIDP20C65D2XKSA1InfineonIDP30E120Cypress Semiconductor (Infineon Technologies)IGBT ModuleIDP40E65D2
IDP2303XUMA1Infineon TechnologiesIC OFFLINE SW HALF-BRDG 16DSO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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