IDH10G65C6XKSA1 Tech Spezifikatioune
Infineon Technologies - IDH10G65C6XKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IDH10G65C6XKSA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.35 V @ 10 A | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | PG-TO220-2 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 33 µA @ 420 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 24A | |
| Capacitance @ Vr, F. | 495pF @ 1V, 1MHz | |
| Basis Produktnummer | IDH10G65 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IDH10G65C6XKSA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IDH10G65C6XKSA1 | IDH10SG60C | IDH10S60C | IDH10SG60C D10G60C |
| Hiersteller | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) | INFINE0N |
| Capacitance @ Vr, F. | 495pF @ 1V, 1MHz | 290pF @ 1V, 1MHz | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.35 V @ 10 A | 2.1 V @ 10 A | - | - |
| Basis Produktnummer | IDH10G65 | - | - | - |
| Serie | - | CoolSiC™+ | - | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 600 V | - | - |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | - | - |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | - | - |
| Supplier Device Package | PG-TO220-2 | PG-TO220-2-2 | - | - |
| Mounting Type | Through Hole | Through Hole | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 24A | 10A | - | - |
| Package / Case | TO-220-2 | TO-220-2 | - | - |
| Package protegéieren | Tube | Bulk | - | - |
| Aktuell - Reverse Leakage @ Vr | 33 µA @ 420 V | 90 µA @ 600 V | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | - | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | - | - |
IDH10S60CCypress Semiconductor (Infineon Technologies)IGBT ModuleIDH10SG60C D10G60CINFINE0NIDH12G65C5 D1265C5Cypress Semiconductor (Infineon Technologies)IDH10G65C5ZInfineonIDH10SG60CInfineon TechnologiesDIODE SIL CARB 600V 10A TO220-2IDH10G120C5Cypress Semiconductor (Infineon Technologies)IDH10G65C5Cypress Semiconductor (Infineon Technologies)IDH12G65C6Cypress Semiconductor (Infineon Technologies)IDH09SG60CCypress Semiconductor (Infineon Technologies)IGBT ModuleIDH10G65C6INEINEONIDH10S120Cypress Semiconductor (Infineon Technologies)IGBT ModuleIDH10G120C5 D1012C5Cypress Semiconductor (Infineon Technologies)IDH08SG60CXKSA2InfineonIDH09SG60C 09G60CCypress Semiconductor (Infineon Technologies)IDH10G65C5 D1065C5Cypress Semiconductor (Infineon Technologies)IDH12G65C5XKSA2InfineonIDH12G65C5Cypress Semiconductor (Infineon Technologies)IDH12S60CCypress Semiconductor (Infineon Technologies)IGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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