BUZ80A Tech Spezifikatioune
Infineon Technologies - BUZ80A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BUZ80A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BUZ80A.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | BUZ80A | BUZ73AL | BUZ73L | BUZ73A H |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | 840 pF @ 25 V | 840 pF @ 25 V | 530 pF @ 25 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Entworf fir Source Voltage (Vdss) | 800 V | 200 V | 200 V | 200 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Supplier Device Package | TO-220AB | PG-TO220-3 | PG-TO220-3 | PG-TO220-3 |
| Serie | SIPMOS® | SIPMOS® | SIPMOS® | SIPMOS® |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 2V @ 1mA | 2V @ 1mA | 4V @ 1mA |
| Power Dissipation (Max) | 100W (Tc) | 40W (Tc) | 40W (Tc) | 40W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Tc) | 5.5A (Tc) | 7A (Tc) | 5.5A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V | 5V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V | 600mOhm @ 3.5A, 5V | 400mOhm @ 3.5A, 5V | 600mOhm @ 4.5A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden BUZ80A PDF DataDhusts an Infineon Technologies Dokumentatioun fir BUZ80A - Infineon Technologies.
BUZ90AFFairchild (onsemi)BUZ90AINFBUZ73ALInfineon TechnologiesMOSFET N-CH 200V 5.5A TO220-3
BUZ78 MOSCypress Semiconductor (Infineon Technologies)BUZ91ASiemensBUZ73L HCypress Semiconductor (Infineon Technologies)BUZ73LInfineon TechnologiesMOSFET N-CH 200V 7A TO220-3BUZ74ASiemensBUZ73A HInfineon TechnologiesMOSFET N-CH 200V 5.5A TO220-3
BUZ941ZNF3STMicroelectronicsBUZ91AFCypress Semiconductor (Infineon Technologies)BUZ73AInfineon TechnologiesMOSFET N-CH 200V 5.5A TO220-3BUZ77ASiemensBUZ73ALHCypress Semiconductor (Infineon Technologies)BUZ73AL HCypress Semiconductor (Infineon Technologies)BUZ80FICypress Semiconductor (Infineon Technologies)BUZ93 MOSCypress Semiconductor (Infineon Technologies)BUZ91AF BUZ91A BUZ91Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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