BUZ30A Tech Spezifikatioune
Infineon Technologies - BUZ30A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BUZ30A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-3-1 | |
Serie | SIPMOS® | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-220-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BUZ30A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BUZ30A | BUZ30AH | BUZ30AH3045A | BUZ31 E3045A |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V | 130mOhm @ 13.5A, 10V | 130mOhm @ 13.5A, 10V | 200mOhm @ 9A, 5V |
Package protegéieren | Tube | Bulk | Bulk | Tape & Reel (TR) |
Package / Case | TO-220-3 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tc) | 21A (Tc) | 21A (Tc) | 14.5A (Tc) |
Serie | SIPMOS® | SIPMOS® | SIPMOS® | SIPMOS® |
Supplier Device Package | PG-TO220-3-1 | PG-TO220-3 | PG-TO263-3-2 | PG-TO263-3 |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | 1900 pF @ 25 V | 1900 pF @ 25 V | 1120 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Power Dissipation (Max) | 125W (Tc) | 125W (Tc) | 125W (Tc) | 95W (Tc) |
Eroflueden BUZ30A PDF DataDhusts an Infineon Technologies Dokumentatioun fir BUZ30A - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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