BTS282Z E3230 Tech Spezifikatioune
Infineon Technologies - BTS282Z E3230 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BTS282Z E3230
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 240µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | P-TO220-7-230 | |
Serie | TEMPFET® | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 36A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-220-7 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Temperature Sensing Diode | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 49 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BTS282Z E3230.
Produktiounsattriff | ||||
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Part Number | BTS282Z E3230 | BTS247Z E3062A | BTS282ZE3230 | BTS282Z E3180A |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Operatioun Temperatur | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
Serie | TEMPFET® | TEMPFET® | TEMPFET® | TEMPFET® |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 33A (Tc) | 80A (Tc) | 80A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 10 V | 90 nC @ 10 V | 232 nC @ 10 V | 232 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 49 V | 55 V | 49 V | 49 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | 1730 pF @ 25 V | 4800 pF @ 25 V | 4800 pF @ 25 V |
Package / Case | TO-220-7 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | TO-220-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Vgs (th) (Max) @ Id | 2V @ 240µA | 2V @ 90µA | 2V @ 240µA | 2V @ 240µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 36A, 10V | 18mOhm @ 12A, 10V | 6.5mOhm @ 36A, 10V | 6.5mOhm @ 36A, 10V |
Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Power Dissipation (Max) | 300W (Tc) | 120W (Tc) | 300W (Tc) | 300W (Tc) |
Supplier Device Package | P-TO220-7-230 | PG-TO263-5-2 | PG-TO220-7-12 | PG-TO220-7-180 |
FET Feature | Temperature Sensing Diode | Temperature Sensing Diode | - | Temperature Sensing Diode |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Eroflueden BTS282Z E3230 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BTS282Z E3230 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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