BTS244Z E3062A Tech Spezifikatioune
Infineon Technologies - BTS244Z E3062A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BTS244Z E3062A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 130µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-5-62 | |
Serie | TEMPFET® | |
Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V | |
Power Dissipation (Max) | 170W (Tc) | |
Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Temperature Sensing Diode | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BTS244Z E3062A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BTS244Z E3062A | BTS244ZE3043 | BTS244Z E3043 | BTS240AHKSA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V | 13mOhm @ 19A, 10V | 13mOhm @ 19A, 10V | 18mOhm @ 47A, 10V |
Supplier Device Package | PG-TO220-5-62 | TO-220-5 | P-TO220-5-43 | PG-TO218-3-1 |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 50 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 130 nC @ 10 V | 130 nC @ 10 V | - |
Serie | TEMPFET® | * | TEMPFET® | Automotive, AEC-Q101 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | 35A (Tc) | 35A (Tc) | 58A (Tc) |
Vgs (th) (Max) @ Id | 2V @ 130µA | 2V @ 130µA | 2V @ 130µA | 3.5V @ 1mA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 170W (Tc) | 170W (Tc) | 170W (Tc) | 170W |
Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
FET Feature | Temperature Sensing Diode | - | Temperature Sensing Diode | - |
Package protegéieren | Tape & Reel (TR) | Bulk | Tube | Bulk |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 25 V | 2660 pF @ 25 V | 2660 pF @ 25 V | 4300 pF @ 25 V |
Operatioun Temperatur | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | TO-220-5 | TO-220-5 | TO-218-3 |
Eroflueden BTS244Z E3062A PDF DataDhusts an Infineon Technologies Dokumentatioun fir BTS244Z E3062A - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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