BSZ16DN25NS3GATMA1 Tech Spezifikatioune
Infineon Technologies - BSZ16DN25NS3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSZ16DN25NS3GATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 32µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TSDSON-8 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 5.5A, 10V | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 250 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.9A (Tc) | |
| Basis Produktnummer | BSZ16DN25 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSZ16DN25NS3GATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSZ16DN25NS3GATMA1 | BSZ22DN20NS3G | BSZ180P03NS3EGATMA1 | BSZ160N10NS3G |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| FET Typ | N-Channel | N-Channel | P-Channel | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Vgs (th) (Max) @ Id | 4V @ 32µA | 4V @ 13µA | 3.1V @ 48µA | - |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
| Entworf fir Source Voltage (Vdss) | 250 V | 200 V | 30 V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Vgs (Max) | ±20V | ±20V | ±25V | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.9A (Tc) | 7A (Tc) | 9A (Ta), 39.5A (Tc) | - |
| Power Dissipation (Max) | 62.5W (Tc) | 34W (Tc) | 2.1W (Ta), 40W (Tc) | - |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 5.5A, 10V | 225mOhm @ 3.5A, 10V | 18mOhm @ 20A, 10V | - |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V | 5.6 nC @ 10 V | 30 nC @ 10 V | - |
| Serie | OptiMOS™ | OptiMOS™3 | OptiMOS™ | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 6V, 10V | - |
| Supplier Device Package | PG-TSDSON-8 | PG-TSDSON-8-1 | PG-TSDSON-8 | - |
| Basis Produktnummer | BSZ16DN25 | - | BSZ180 | - |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V | 430 pF @ 100 V | 2220 pF @ 15 V | - |
Eroflueden BSZ16DN25NS3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSZ16DN25NS3GATMA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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