BSZ018NE2LSATMA1 Tech Spezifikatioune
Infineon Technologies - BSZ018NE2LSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSZ018NE2LSATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TSDSON-8-FL | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 12 V | |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 25 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Ta), 40A (Tc) | |
| Basis Produktnummer | BSZ018 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSZ018NE2LSATMA1.
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|---|---|---|---|---|
| Part Number | BSZ018NE2LSATMA1 | BSZ021N04LS6ATMA1 | BSZ018N04LS6ATMA1 | BSZ019N03LSATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 31 nC @ 10 V | 31 nC @ 10 V | 44 nC @ 10 V |
| Serie | OptiMOS™ | OptiMOS™ 6 | OptiMOS™ 6 | OptiMOS™ |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Ta), 40A (Tc) | 25A (Ta), 40A (Tc) | 27A (Ta), 40A (Tc) | 22A (Ta). 40A (Tc) |
| Basis Produktnummer | BSZ018 | BSZ021 | BSZ018 | BSZ019 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 12 V | 2700 pF @ 20 V | 2700 pF @ 20 V | 2800 pF @ 15 V |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V | 2.1mOhm @ 20A, 10V | 1.8mOhm @ 20A, 10V | 1.9mOhm @ 20A, 10V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.3V @ 250µA | 2.3V @ 250µA | 2V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | 2.5W (Ta), 83W (Tc) | 2.5W (Ta), 83W (Tc) | 2.1W (Ta), 69W (Tc) |
| Entworf fir Source Voltage (Vdss) | 25 V | 40 V | 40 V | 30 V |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Supplier Device Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden BSZ018NE2LSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSZ018NE2LSATMA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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