BSS670S2LH6327XTSA1 Tech Spezifikatioune
Infineon Technologies - BSS670S2LH6327XTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSS670S2LH6327XTSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 2.7µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-SOT23 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 650mOhm @ 270mA, 10V | |
Power Dissipation (Max) | 360mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 2.26 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA (Ta) | |
Basis Produktnummer | BSS670 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSS670S2LH6327XTSA1.
Produktiounsattriff | ||||
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Part Number | BSS670S2LH6327XTSA1 | BSS7728N | BSS670S2L | BSS670S2LH6433XTMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 2V @ 2.7µA | 2.3V @ 26µA | 2V @ 2.7µA | - |
Power Dissipation (Max) | 360mW (Ta) | 360mW (Ta) | 360mW (Ta) | - |
Serie | OptiMOS™ | SIPMOS® | OptiMOS™ | * |
Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 55 V | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 650mOhm @ 270mA, 10V | 5Ohm @ 500mA, 10V | 650mOhm @ 270mA, 10V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | - |
Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V | 56 pF @ 25 V | 75 pF @ 25 V | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 2.26 nC @ 10 V | 1.5 nC @ 10 V | 2.26 nC @ 10 V | - |
Supplier Device Package | PG-SOT23 | PG-SOT23 | PG-SOT23 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA (Ta) | 200mA (Ta) | 540mA (Ta) | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Basis Produktnummer | BSS670 | - | - | BSS670 |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden BSS670S2LH6327XTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSS670S2LH6327XTSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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