BSS214NWH6327 Tech Spezifikatioune
Infineon Technologies - BSS214NWH6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSS214NWH6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 3.7µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT323-3-2 | |
| Serie | OptiMOS™ 2 | |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Package / Case | SC-70, SOT-323 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSS214NWH6327.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSS214NWH6327 | BSS215PH6327XTSA1 | BSS215P H6327 | BSS214NH6327XTSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | 1.5A (Ta) | 1.5A (Ta) | 1.5A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 5 V | 3.6 nC @ 4.5 V | 3.6 nC @ 4.5 V | 0.8 nC @ 5 V |
| Vgs (th) (Max) @ Id | 1.2V @ 3.7µA | 1.2V @ 11µA | 600mV @ 11µA | 1.2V @ 3.7µA |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V | 150mOhm @ 1.5A, 4.5V | 150mOhm @ 1.5A, 4.5V | 140mOhm @ 1.5A, 4.5V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SC-70, SOT-323 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Supplier Device Package | PG-SOT323-3-2 | PG-SOT23 | PG-SOT23-3-5 | PG-SOT23 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Serie | OptiMOS™ 2 | OptiMOS™ | OptiMOS™P2 | OptiMOS™ |
| Vgs (Max) | ±12V | ±12V | ±12V | ±12V |
| Power Dissipation (Max) | 500mW (Ta) | 500mW (Ta) | 500mW (Ta) | 500mW (Ta) |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 143 pF @ 10 V | 346 pF @ 15 V | 346 pF @ 15 V | 143 pF @ 10 V |
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BSS214NWH6327XTSA1Infineon TechnologiesMOSFET N-CH 20V 1.5A SOT323-3BSS215P E6327Cypress Semiconductor (Infineon Technologies)BSS214NMSVBSS214NE6327BSS214N H6327Cypress Semiconductor (Infineon Technologies)BSS223PINFBSS214NW H6327Cypress Semiconductor (Infineon Technologies)BSS223PWCypress Semiconductor (Infineon Technologies)BSS215PH6327| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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