BSP317PH6327XTSA1 Tech Spezifikatioune
Infineon Technologies - BSP317PH6327XTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSP317PH6327XTSA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 370µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT223-4 | |
| Serie | Automotive, AEC-Q101, SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 250 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 430mA (Ta) | |
| Basis Produktnummer | BSP317 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSP317PH6327XTSA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSP317PH6327XTSA1 | BSP318SH6327XTSA1 | BSP318S E6327 | BSP317PE6327 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 430mA (Ta) | 2.6A (Tj) | 2.6A (Ta) | 430mA (Ta) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V | 90mOhm @ 2.6A, 10V | 90mOhm @ 2.6A, 10V | 4Ohm @ 430mA, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V | 380 pF @ 25 V | 380 pF @ 25 V | 262 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | 1.8W (Ta) | 1.8W (Ta) |
| Basis Produktnummer | BSP317 | BSP318 | - | BSP317 |
| FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 | PG-SOT223-4 | PG-SOT223-4 |
| Vgs (th) (Max) @ Id | 2V @ 370µA | 2V @ 20µA | 2V @ 20µA | 2V @ 370µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Entworf fir Source Voltage (Vdss) | 250 V | 60 V | 60 V | 250 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Serie | Automotive, AEC-Q101, SIPMOS® | SIPMOS® | SIPMOS® | SIPMOS® |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V | 20 nC @ 10 V | 20 nC @ 10 V | 15.1 nC @ 10 V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden BSP317PH6327XTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSP317PH6327XTSA1 - Infineon Technologies.
BSP316PH6327XTSA1InfineonBSP318SH6327Cypress Semiconductor (Infineon Technologies)BSP318SCypress Semiconductor (Infineon Technologies)BSP317PCypress Semiconductor (Infineon Technologies)BSP317P H6327Cypress Semiconductor (Infineon Technologies)BSP318S MOSCypress Semiconductor (Infineon Technologies)BSP318S H6327Cypress Semiconductor (Infineon Technologies)BSP317P L6327Cypress Semiconductor (Infineon Technologies)BSP317PH6327InfineonBSP318SH6327XTSA1Infineon TechnologiesMOSFET N-CH 60V 2.6A SOT223-4BSP318S E6327Infineon TechnologiesMOSFET N-CH 60V 2.6A SOT223-4BSP318S L6327Cypress Semiconductor (Infineon Technologies)
BSP318SiemensBSP317PE6327Infineon TechnologiesMOSFET P-CH 250V 430MA SOT223-4BSP318SE6327InfineonBSP316PH6327Cypress Semiconductor (Infineon Technologies)BSP317Cypress Semiconductor (Infineon Technologies)BSP316PL6327Infineon TechnologiesP-CHANNEL MOSFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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