BSP295H6327XTSA1 Tech Spezifikatioune
Infineon Technologies - BSP295H6327XTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSP295H6327XTSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1.8V @ 400µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-SOT223-4 | |
Serie | SIPMOS® | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V | |
Power Dissipation (Max) | 1.8W (Ta) | |
Package / Case | TO-261-4, TO-261AA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Ta) | |
Basis Produktnummer | BSP295 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSP295H6327XTSA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSP295H6327XTSA1 | BSP295L6327 | BSP296E6327 | BSP295E6327 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Ta) | 1.8A (Ta) | 1.1A (Ta) | 1.8A (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | BSP295 | - | - | - |
Supplier Device Package | PG-SOT223-4 | PG-SOT223-4-21 | PG-SOT223-4 | PG-SOT223-4 |
Vgs (th) (Max) @ Id | 1.8V @ 400µA | 1.8V @ 400µA | 1.8V @ 400µA | 1.8V @ 400µA |
Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V | 300mOhm @ 1.8A, 10V | 700mOhm @ 1.1A, 10V | 300mOhm @ 1.8A, 10V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | SIPMOS® | SIPMOS® | SIPMOS® | SIPMOS® |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 17 nC @ 10 V | 17.2 nC @ 10 V | 17 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V | 368 pF @ 25 V | 364 pF @ 25 V | 368 pF @ 25 V |
Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | 1.79W (Ta) | 1.8W (Ta) |
Eroflueden BSP295H6327XTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSP295H6327XTSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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