BSO211PH Tech Spezifikatioune
Infineon Technologies - BSO211PH technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO211PH
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 25µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 532-FCBGA (23x23) | |
| Serie | OptiMOS™ P | |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.6A, 4.5V | |
| Power - Max | 1.6W (Ta) | |
| Package / Case | 532-BFBGA, FCBGA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1095pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | BSO211 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSO211PH.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | BSO211PH | BSO215C | BSO211P | BSO211P H |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
| Basis Produktnummer | BSO211 | BSO215 | BSO211 | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| FET Feature | Logic Level Gate, 2.5V Drive | Logic Level Gate | Logic Level Gate | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1095pF @ 15V | 246pF @ 25V | 920pF @ 15V | - |
| Power - Max | 1.6W (Ta) | 2W | 2W | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | - |
| Package / Case | 532-BFBGA, FCBGA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V | 11.5nC @ 10V | 23.9nC @ 4.5V | - |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Vgs (th) (Max) @ Id | 1.2V @ 25µA | 2V @ 10µA | 1.2V @ 25µA | - |
| Serie | OptiMOS™ P | SIPMOS® | OptiMOS™ | - |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.6A, 4.5V | 100mOhm @ 3.7A, 10V | 67mOhm @ 4.7A, 4.5V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 3.7A | 4.7A | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Konfiguratioun | 2 P-Channel (Dual) | N and P-Channel | 2 P-Channel (Dual) | - |
| Supplier Device Package | 532-FCBGA (23x23) | 8-SO | PG-DSO-8 | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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