BSO080P03SHXUMA1 Tech Spezifikatioune
Infineon Technologies - BSO080P03SHXUMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSO080P03SHXUMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-DSO-8 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.9A, 10V | |
| Power Dissipation (Max) | 1.79W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.6A (Ta) | |
| Basis Produktnummer | BSO080 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSO080P03SHXUMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSO080P03SHXUMA1 | BSO083N03MSGXUMA1 | BSO072N03S | BSO094N03S |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Power Dissipation (Max) | 1.79W (Ta) | 1.56W (Ta) | 1.56W (Ta) | 1.56W (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14.9A, 10V | 8.3mOhm @ 14A, 10V | 6.8mOhm @ 15A, 10V | 9.1mOhm @ 13A, 10V |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2V @ 250µA | 2V @ 45µA | 2V @ 30µA |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V | 2100 pF @ 15 V | 3230 pF @ 15 V | 2300 pF @ 15 V |
| Vgs (Max) | ±25V | ±20V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.6A (Ta) | 11A (Ta) | 12A (Ta) | 10A (Ta) |
| Supplier Device Package | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 | PG-DSO-8 |
| FET Feature | - | - | - | - |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | BSO080 | - | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V | 27 nC @ 10 V | 25 nC @ 5 V | 18 nC @ 5 V |
Eroflueden BSO080P03SHXUMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSO080P03SHXUMA1 - Infineon Technologies.
BSO080P03NS3EGCypress Semiconductor (Infineon Technologies)BSO080P03NSCypress Semiconductor (Infineon Technologies)BSO080P03S HCypress Semiconductor (Infineon Technologies)
BSO094N3SIntersil (Renesas Electronics Corporation)BSO083N03MSGXUMA1Infineon TechnologiesMOSFET N-CH 30V 11A 8DSOBSO064N3SCypress Semiconductor (Infineon Technologies)BSO065N03MSGCypress Semiconductor (Infineon Technologies)BSO072N03SInfineon TechnologiesMOSFET N-CH 30V 12A 8DSOBSO094N03SInfineon TechnologiesMOSFET N-CH 30V 10A 8DSOBSO104N03SInfineon TechnologiesMOSFET N-CH 30V 10A 8DSOBSO080P03SHCypress Semiconductor (Infineon Technologies)BSO110N03MSGXUMA1InfineonBSO080P03SCypress Semiconductor (Infineon Technologies)BSO083N03MSGInfineon TechnologiesN-CHANNEL POWER MOSFETBSO110N03MSGCypress Semiconductor (Infineon Technologies)BSO104N3SCypress Semiconductor (Infineon Technologies)
BSO083N03MSBSO080P03NS3GInfineon TechnologiesBSO080P03 - 20V-250V P-CHANNEL P| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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