BSF050N03LQ3G Tech Spezifikatioune
Infineon Technologies - BSF050N03LQ3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSF050N03LQ3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | MG-WDSON-2 | |
| Serie | OptiMOS® | |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 2.2W (Ta), 28W (Tc) | |
| Package / Case | DirectFET™ Isometric MX | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 60A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSF050N03LQ3G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | BSF050N03LQ3G | BSF024N03LT3G | BSF134N10NJ3G | IRFP254PBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Siliconix |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V | 2.4mOhm @ 20A, 10V | - | 140mOhm @ 14A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 15 V | 5500 pF @ 15 V | - | 2700 pF @ 25 V |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | - | Through Hole |
| Supplier Device Package | MG-WDSON-2 | MG-WDSON-2 | - | TO-247AC |
| Power Dissipation (Max) | 2.2W (Ta), 28W (Tc) | 2.2W (Ta), 42W (Tc) | - | 190W (Tc) |
| Package protegéieren | Bulk | Bulk | - | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 60A (Tc) | 15A (Ta), 106A (Tc) | - | 23A (Tc) |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | - | 4V @ 250µA |
| Package / Case | DirectFET™ Isometric MX | DirectFET™ Isometric MX | - | TO-247-3 |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | 71 nC @ 10 V | - | 140 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | 10V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | - | 250 V |
| FET Feature | - | - | - | - |
| Serie | OptiMOS® | OptiMOS™3 | - | - |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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