BSD223P L6327 Tech Spezifikatioune
Infineon Technologies - BSD223P L6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSD223P L6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 1.5µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT363-PO | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 390mA, 4.5V | |
| Power - Max | 250mW | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 390mA | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | BSD223 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSD223P L6327.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSD223P L6327 | BSD223P | BSD235NH6327XTSA1 | BSD235CH6327XTSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | PG-SOT363-PO | PG-SOT363-PO | PG-SOT363-PO | PG-SOT363-6-1 |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 20V |
| Serie | OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, OptiMOS™ 2 | OptiMOS™ |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Basis Produktnummer | BSD223 | BSD223 | BSD235 | BSD235 |
| Konfiguratioun | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 390mA, 4.5V | 1.2Ohm @ 390mA, 4.5V | 350mOhm @ 950mA, 4.5V | 350mOhm @ 950mA, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V | 56pF @ 15V | 63pF @ 10V | 47pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V | 0.62nC @ 4.5V | 0.32nC @ 4.5V | 0.34nC @ 4.5V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | 6-VSSOP, SC-88, SOT-363 | 6-VSSOP, SC-88, SOT-363 | 6-VSSOP, SC-88, SOT-363 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 390mA | 390mA | 950mA | 950mA, 530mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 250mW | 250mW | 500mW | 500mW |
| Vgs (th) (Max) @ Id | 1.2V @ 1.5µA | 1.2V @ 1.5µA | 1.2V @ 1.6µA | 1.2V @ 1.6µA |
Eroflueden BSD223P L6327 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSD223P L6327 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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