BSC440N10NS3GATMA1 Tech Spezifikatioune
Infineon Technologies - BSC440N10NS3GATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC440N10NS3GATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 12µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TDSON-8-1 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V | |
Power Dissipation (Max) | 29W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Ta), 18A (Tc) | |
Basis Produktnummer | BSC440 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC440N10NS3GATMA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSC440N10NS3GATMA1 | BSC520N15NS3GATMA1 | BSC500N20NS3G | BSC440N10NS3 |
Hiersteller | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) | Cypress Semiconductor (Infineon Technologies) |
Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V | 52mOhm @ 18A, 10V | - | - |
Serie | OptiMOS™ | OptiMOS™ | - | - |
Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V | 12 nC @ 10 V | - | - |
Vgs (Max) | ±20V | ±20V | - | - |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-5 | - | - |
Power Dissipation (Max) | 29W (Tc) | 57W (Tc) | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | Surface Mount | - | - |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | - | - |
Basis Produktnummer | BSC440 | BSC520 | - | - |
FET Typ | N-Channel | N-Channel | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 150 V | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 8V, 10V | - | - |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Ta), 18A (Tc) | 21A (Tc) | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 50 V | 890 pF @ 75 V | - | - |
Vgs (th) (Max) @ Id | 3.5V @ 12µA | 4V @ 35µA | - | - |
Eroflueden BSC440N10NS3GATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC440N10NS3GATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.