BSC090N03MSG Tech Spezifikatioune
Infineon Technologies - BSC090N03MSG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC090N03MSG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-5 | |
| Serie | OptiMOS™ 3 | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 32W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 48A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC090N03MSG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC090N03MSG | BSC0906NSATMA1 | BSC0908NS | BSC091N03MSCG |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V | 870 pF @ 15 V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 32W (Tc) | 2.5W (Ta), 30W (Tc) | - | - |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V | 4.5mOhm @ 30A, 10V | - | - |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-6 | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Serie | OptiMOS™ 3 | OptiMOS™ | - | * |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | - | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 48A (Tc) | 18A (Ta), 63A (Tc) | - | - |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | 13 nC @ 10 V | - | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Bulk |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
BSC0911NDATMA1InfineonBSC090N03LSG MOSCypress Semiconductor (Infineon Technologies)BSC0910NDIATMA1InfineonBSC0906NSATMA1Infineon TechnologiesMOSFET N-CH 30V 18A/63A TDSONBSC0908NSInfineon TechnologiesN-CHANNEL POWER MOSFETBSC0921NDIATMA1InfineonBSC090N03LSCypress Semiconductor (Infineon Technologies)BSC091N03MSCGInfineon TechnologiesN-CHANNEL POWER MOSFETBSC0910NDIInfineonBSC0923NDICypress Semiconductor (Infineon Technologies)BSC0908NS MOSCypress Semiconductor (Infineon Technologies)BSC0911NDCypress Semiconductor (Infineon Technologies)BSC0921NDI MOSCypress Semiconductor (Infineon Technologies)BSC090N03LSGInfineon TechnologiesBSC090N03 - 12V-300V N-CHANNEL PBSC0909NS MOSCypress Semiconductor (Infineon Technologies)BSC0921NDICypress Semiconductor (Infineon Technologies)BSC090N03MSInfineonBSC0909NSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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