BSC0901NSATMA1 Tech Spezifikatioune
Infineon Technologies - BSC0901NSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC0901NSATMA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TDSON-8-5 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta), 100A (Tc) | |
Basis Produktnummer | BSC0901 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC0901NSATMA1.
Produktiounsattriff | ||||
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Part Number | BSC0901NSATMA1 | BSC0902NSATMA1 | BSC0902NSIATMA1 | BSC0901NS |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | 2V @ 10mA | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V | 1700 pF @ 15 V | 1500 pF @ 15 V | - |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta), 100A (Tc) | 24A (Ta), 100A (Tc) | 23A (Ta), 100A (Tc) | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | 26 nC @ 10 V | 32 nC @ 10 V | - |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 48W (Tc) | 2.5W (Ta), 48W (Tc) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-6 | PG-TDSON-8-6 | - |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V | 2.6mOhm @ 30A, 10V | 2.8mOhm @ 30A, 10V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Basis Produktnummer | BSC0901 | BSC0902 | BSC0902 | - |
Eroflueden BSC0901NSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC0901NSATMA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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