BSC032N04LSATMA1 Tech Spezifikatioune
Infineon Technologies - BSC032N04LSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC032N04LSATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-6 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 98A (Tc) | |
| Basis Produktnummer | BSC032 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC032N04LSATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC032N04LSATMA1 | BSC032N03SG | BSC032N03S | BSC032NE2LSATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | PG-TDSON-8-6 | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-6 |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 70µA | 2V @ 70µA | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 20 V | 5080 pF @ 15 V | 5080 pF @ 15 V | 1200 pF @ 12 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 98A (Tc) | 23A (Ta), 100A (Tc) | 23A (Ta), 100A (Tc) | 22A (Ta), 84A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Basis Produktnummer | BSC032 | - | - | BSC032 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 39 nC @ 5 V | 39 nC @ 5 V | 16 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V | 3.2mOhm @ 50A, 10V | 3.2mOhm @ 50A, 10V | 3.2mOhm @ 30A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) | 2.8W (Ta), 78W (Tc) | 2.8W (Ta), 78W (Tc) | 2.8W (Ta), 78W (Tc) |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 30 V | 25 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden BSC032N04LSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC032N04LSATMA1 - Infineon Technologies.
BSC032N04LSCypress Semiconductor (Infineon Technologies)BSC032N03SGInfineon TechnologiesMOSFET N-CH 30V 23A/100A TDSONBSC032N03S MOSCypress Semiconductor (Infineon Technologies)BSC034N03LSGATMA1InfineonBSC031N06NS3Cypress Semiconductor (Infineon Technologies)BSC035N04LSCypress Semiconductor (Infineon Technologies)BSC032N03SInfineon TechnologiesMOSFET N-CH 30V 23A/100A TDSONBSC031N06NSCypress Semiconductor (Infineon Technologies)BSC032NE2LSATMA1Infineon TechnologiesMOSFET N-CH 25V 22A/84A TDSONBSC031N06NS3GCypress Semiconductor (Infineon Technologies)BSC034N03LSGCypress Semiconductor (Infineon Technologies)BSC032N04LS MOSCypress Semiconductor (Infineon Technologies)BSC031N06NS3GATMA1InfineonBSC034N06NSATMA1InfineonBSC034N10LS5Cypress Semiconductor (Infineon Technologies)BSC032NE2LSCypress Semiconductor (Infineon Technologies)BSC034N06NS MOSCypress Semiconductor (Infineon Technologies)BSC034N06NSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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