BSC022N04LSATMA1 Tech Spezifikatioune
Infineon Technologies - BSC022N04LSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC022N04LSATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-6 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
| Basis Produktnummer | BSC022 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC022N04LSATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC022N04LSATMA1 | BSC024NE2LSATMA1 | BSC022N03S | BSC021N08NS5ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 48W (Tc) | 2.8W (Ta), 104W (Tc) | 214W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 25A (Ta), 110A (Tc) | 28A (Ta), 100A (Tc) | 100A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 100µA | 3.8V @ 146µA |
| Entworf fir Source Voltage (Vdss) | 40 V | 25 V | 30 V | 80 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | - | - | - | Standard |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V | 1700 pF @ 12 V | 7490 pF @ 15 V | 8600 pF @ 40 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Supplier Device Package | PG-TDSON-8-6 | PG-TDSON-8-5 | PG-TDSON-8-1 | PG-TSON-8-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 6V, 10V |
| Basis Produktnummer | BSC022 | BSC024 | - | BSC021 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 23 nC @ 10 V | 58 nC @ 5 V | 29 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V | 2.4mOhm @ 30A, 10V | 2.2mOhm @ 50A, 10V | 2.1mOhm @ 50A, 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™, StrongIRFET™ |
Eroflueden BSC022N04LSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC022N04LSATMA1 - Infineon Technologies.
BSC021N08NS5Cypress Semiconductor (Infineon Technologies)BSC024NE2LSATMA1Infineon TechnologiesMOSFET N-CH 25V 25A/110A TDSONBSC024NE2LSCypress Semiconductor (Infineon Technologies)BSC022N04LS MOSCypress Semiconductor (Infineon Technologies)BSC025N03MSCypress Semiconductor (Infineon Technologies)BSC022N03SInfineon TechnologiesMOSFET N-CH 30V 28A/100A TDSONBSC022N04LSCypress Semiconductor (Infineon Technologies)BSC025N03LSInfineonBSC024N025SG MOSCypress Semiconductor (Infineon Technologies)BSC025N03LSGCypress Semiconductor (Infineon Technologies)BSC021N08NS5ATMA1Infineon TechnologiesMOSFET TRENCH 80V TSON-8BSC022N03SGInfineon TechnologiesMOSFET N-CH 30V 28A/100A TDSONBSC025N03LSGATMA1Infineon TechnologiesMOSFET N-CH 30V 25A/100A TDSONBSC022N04LS6Cypress Semiconductor (Infineon Technologies)BSC022N04LS6ATMA1BSC020N03MSGATMA1InfineonBSC025N03MSGInfineon TechnologiesBSC025N03 - 12V-300V N-CHANNEL PBSC024N025SGCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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