BSC009NE2LSATMA1 Tech Spezifikatioune
Infineon Technologies - BSC009NE2LSATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSC009NE2LSATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TDSON-8-7 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 30A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 12 V | |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 25 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 41A (Ta), 100A (Tc) | |
| Basis Produktnummer | BSC009 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSC009NE2LSATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSC009NE2LSATMA1 | BSC010N04LS6ATMA1 | BSC010N04LSATMA1 | BSC007N04LS6ATMA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| FET Feature | - | - | - | - |
| Supplier Device Package | PG-TDSON-8-7 | PG-TDSON-8-6 | PG-TDSON-8 FL | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 41A (Ta), 100A (Tc) | 40A (Ta), 100A (Tc) | 38A (Ta), 100A (Tc) | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 12 V | 4600 pF @ 20 V | 6800 pF @ 20 V | - |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.3V @ 250µA | 2V @ 250µA | - |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 30A, 10V | 1mOhm @ 50A, 10V | 1mOhm @ 50A, 10V | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) | 3W (Ta), 150W (Tc) | 2.5W (Ta), 139W (Tc) | - |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V | 67 nC @ 4.5 V | 95 nC @ 10 V | - |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Entworf fir Source Voltage (Vdss) | 25 V | 40 V | 40 V | - |
| Basis Produktnummer | BSC009 | BSC010 | BSC010 | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Eroflueden BSC009NE2LSATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSC009NE2LSATMA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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