BFN39E6327HTSA1 Tech Spezifikatioune
Infineon Technologies - BFN39E6327HTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BFN39E6327HTSA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA | |
| Transistor Type | PNP | |
| Supplier Device Package | PG-SOT223-4 | |
| Serie | - | |
| Power - Max | 1.5 W | |
| Package / Case | TO-261-4, TO-261AA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 100MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 200 mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BFN39E6327HTSA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BFN39E6327HTSA1 | BFN39H6327 | BFN26E6327 | BFN38E6327 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA | 500mV @ 2mA, 20mA | 500mV @ 2mA, 20mA | 500mV @ 2mA, 20mA |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V | 40 @ 10mA, 10V | 30 @ 30mA, 10V | 40 @ 10mA, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Transistor Type | PNP | PNP | - | - |
| Serie | - | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-236-3, SC-59, SOT-23-3 | TO-261-4, TO-261AA |
| Frequenz - Iwwergang | 100MHz | 100MHz | 70MHz | 70MHz |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | 300 V | 300 V | 300 V |
| Supplier Device Package | PG-SOT223-4 | SOT-223 | PG-SOT23-3-3 | PG-SOT223-4 |
| Power - Max | 1.5 W | 1.5 W | 360 mW | 1.5 W |
| Aktuell - Sammler (Ic) (Max) | 200 mA | 200 mA | 200 mA | 200 mA |
Eroflueden BFN39E6327HTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BFN39E6327HTSA1 - Infineon Technologies.
BFN27E6327Cypress Semiconductor (Infineon Technologies)
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BFN38TADiodes IncorporatedBFN38 E6327Cypress Semiconductor (Infineon Technologies)BFN39H6327Infineon TechnologiesTRANS PNP 300V 0.2A SOT223BFN39 E6327Cypress Semiconductor (Infineon Technologies)BFN36 H6327Cypress Semiconductor (Infineon Technologies)BFN27 E6327Cypress Semiconductor (Infineon Technologies)BFN26E6327Infineon TechnologiesSMALL SIGNAL BIPOLAR TRANSISTORBFN38 H6327Cypress Semiconductor (Infineon Technologies)BFN26E6327HTSA1InfineonBFN38E6327Infineon TechnologiesSMALL SIGNAL BIPOLAR TRANSISTORBFN38H6327Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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