BCW61CE6327 Tech Spezifikatioune
Infineon Technologies - BCW61CE6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BCW61CE6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA | |
| Transistor Type | PNP | |
| Supplier Device Package | PG-SOT23 | |
| Serie | - | |
| Power - Max | 330 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 250MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 250 @ 2mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 20nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 100 mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BCW61CE6327.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BCW61CE6327 | BCW61DMTF | BCW61DTA | BCW61C,215 |
| Hiersteller | Infineon Technologies | onsemi | Diodes Incorporated | Nexperia USA Inc. |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | 32 V | 32 V | 32 V |
| Aktuell - Sammler (Ic) (Max) | 100 mA | 100 mA | 200 mA | 100 mA |
| Supplier Device Package | PG-SOT23 | SOT-23-3 | SOT-23-3 | TO-236AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA | 550mV @ 1.25mA, 50mA | 550mV @ 1.25mA, 50mA | 550mV @ 1.25mA, 50mA |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 250 @ 2mA, 5V | 380 @ 2mA, 5V | 380 @ 2mA, 5V | 250 @ 2mA, 5V |
| Frequenz - Iwwergang | 250MHz | - | 180MHz | 100MHz |
| Operatioun Temperatur | 150°C (TJ) | - | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Aktuell - Kollektorat Cutoff (Max) | 20nA (ICBO) | 20nA | 20nA | 20nA (ICBO) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | PNP | PNP | PNP | PNP |
| Power - Max | 330 mW | 350 mW | 330 mW | 250 mW |
| Serie | - | - | - | Automotive, AEC-Q101 |
BCW61DMTFonsemiTRANS PNP 32V 0.1A SOT23-3
BCW61C,215NXP USA Inc.TRANSISTOR PNP 32V 100MA SOT23BCW61BTAZETEXBCW61DTADiodes IncorporatedTRANS PNP 32V 0.2A SOT23-3
BCW61FFCypress Semiconductor (Infineon Technologies)BCW61C,215Nexperia USA Inc.TRANS PNP 32V 0.1A TO236ABBCW61C215Freescale / NXP SemiconductorsBCW61C E6327Cypress Semiconductor (Infineon Technologies)BCW61DE-6327Cypress Semiconductor (Infineon Technologies)BCW61CNTE Electronics, IncTRANS PNP 32V 0.1A SOT23
BCW61DLUMILEDSBCW61CMTFonsemiTRANS PNP 32V 0.1A SOT23-3BCW61BMTFonsemiTRANS PNP 32V 0.1A SOT23-3BCW61CInfineon TechnologiesTRANS PNP 32V 0.1A SOT23BCW61D E6327Cypress Semiconductor (Infineon Technologies)
BCW61CLT1AMI Semiconductor/onsemi
BCW61BMTFFairchild SemiconductorTRANS PNP 32V 0.1A SOT23-3BCW61FXX| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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