BCV27E6327HTSA1 Tech Spezifikatioune
Infineon Technologies - BCV27E6327HTSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BCV27E6327HTSA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | PG-SOT23 | |
| Serie | - | |
| Power - Max | 360 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 170MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 500 mA | |
| Basis Produktnummer | BCV27 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BCV27E6327HTSA1.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BCV27E6327HTSA1 | BCV29TA | BCV27E6327 | BCV26 |
| Hiersteller | Infineon Technologies | Diodes Incorporated | Infineon Technologies | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA | 1V @ 100µA, 100mA | 1V @ 100µA, 100mA | - |
| Basis Produktnummer | BCV27 | BCV29 | - | - |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | - |
| Frequenz - Iwwergang | 170MHz | 150MHz | 170MHz | - |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | - | 100nA (ICBO) | - |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | 30 V | - |
| Serie | - | - | Automotive, AEC-Q101 | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V | 20000 @ 100mA, 5V | 20000 @ 100mA, 5V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Package protegéieren | Tape & Reel (TR) | Digi-Reel® | Bulk | - |
| Aktuell - Sammler (Ic) (Max) | 500 mA | 500 mA | 500 mA | - |
| Power - Max | 360 mW | 1 W | 360 mW | - |
| Transistor Type | NPN - Darlington | NPN - Darlington | NPN - Darlington | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-243AA | TO-236-3, SC-59, SOT-23-3 | - |
| Supplier Device Package | PG-SOT23 | SOT-89-3 | PG-SOT23-3-1 | - |
Eroflueden BCV27E6327HTSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BCV27E6327HTSA1 - Infineon Technologies.
BCV26
BCV27 L T116LAPIS Technology
BCV27215NexperiaBCV29TADiodes IncorporatedTRANSISTOR DARL NPN 30V SOT-89BCV28TADiodes IncorporatedBCV27,215NexperiaBCV27.215NexperiaBCV27E6327Infineon TechnologiesBIPOLAR DIGITAL TRANSISTORBCV46BCV46,215NexperiaBCV46E6327Cypress Semiconductor (Infineon Technologies)BCV46215BCV26E6359Cypress Semiconductor (Infineon Technologies)BCV46 E6327Cypress Semiconductor (Infineon Technologies)BCV28H6327Cypress Semiconductor (Infineon Technologies)BCV27E6395Cypress Semiconductor (Infineon Technologies)BCV27 E6327LNFINEONBCV26E-6327Siemens| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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