BC808-40WE6327 Tech Spezifikatioune
Infineon Technologies - BC808-40WE6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BC808-40WE6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Transistor Type | PNP | |
| Supplier Device Package | PG-SOT23-3-11 | |
| Serie | - | |
| Power - Max | 250 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 200MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 500 mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BC808-40WE6327.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | BC808-40WE6327 | BC80816MTF | BC80825MTF | BC808-40E6327 |
| Hiersteller | Infineon Technologies | onsemi | onsemi | Infineon Technologies |
| Serie | - | - | - | - |
| Frequenz - Iwwergang | 200MHz | 100MHz | 100MHz | 200MHz |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Supplier Device Package | PG-SOT23-3-11 | SOT-23-3 | SOT-23-3 | PG-SOT23-3-11 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | PNP | PNP | PNP | PNP |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA | 100nA | 100nA (ICBO) |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V | 100 @ 100mA, 1V | 160 @ 100mA, 1V | 250 @ 100mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | 25 V | 25 V | 25 V |
| Aktuell - Sammler (Ic) (Max) | 500 mA | 800 mA | 800 mA | 500 mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power - Max | 250 mW | 310 mW | 310 mW | 330 mW |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | 700mV @ 50mA, 500mA | 700mV @ 50mA, 500mA | 700mV @ 50mA, 500mA |
BC808LT1AMI Semiconductor/onsemiBC80816MTFonsemiTRANS PNP 25V 0.8A SOT23-3BC80825MTFonsemiTRANS PNP 25V 0.8A SOT23-3
BC808DSFreescale / NXP SemiconductorsBC808-40E6327Infineon TechnologiesTRANS PNP 25V 0.5A SOT23-3BC808-40WInfineon TechnologiesTRANS PNP 25V 0.5A SOT23-3BC808-40Infineon TechnologiesTRANS PNP 25V 0.8A SOT23-3
BC808-40LT1GonsemiTRANS PNP 25V 0.5A SOT23-3BC808-40W E6327Cypress Semiconductor (Infineon Technologies)
BC80840MTFFairchild SemiconductorTRANS PNP 25V 0.8A SOT23-3BC80816MTFFairchild SemiconductorTRANS PNP 25V 0.8A SOT23-3BC808WFreescale / NXP SemiconductorsBC808-25W E6327Cypress Semiconductor (Infineon Technologies)BC80840MTFonsemiTRANS PNP 25V 0.8A SOT23-3BC808-40Diotec SemiconductorBJT SOT-23 25V 800MABC80825MTFFairchild SemiconductorTRANS PNP 25V 0.8A SOT23-3BC808-25WE6327Cypress Semiconductor (Infineon Technologies)BC808-40 E6327Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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