AUIRL3705N Tech Spezifikatioune
International Rectifier - AUIRL3705N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRL3705N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V | |
| Power Dissipation (Max) | 170W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 89A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | Net zoutreffend |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRL3705N.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | AUIRL3705N | AUIRL3705ZSTRL | AUIRL7766M2TR | AUIRL3705Z |
| Hiersteller | International Rectifier | International Rectifier | International Rectifier | International Rectifier |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 89A (Tc) | 75A (Tc) | 10A (Ta) | 75A (Tc) |
| Supplier Device Package | TO-220AB | D2PAK | DirectFET™ Isometric M4 | TO-220AB |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 170W (Tc) | 130W (Tc) | 2.5W (Ta), 62.5W (Tc) | 130W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | 2880 pF @ 25 V | 5305 pF @ 25 V | 2880 pF @ 25 V |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DirectFET™ Isometric M4 | TO-220-3 |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| FET Feature | - | - | - | - |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
| Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 100 V | 55 V |
| Serie | HEXFET® | - | HEXFET® | HEXFET® |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V | 8mOhm @ 52A, 10V | 10mOhm @ 31A, 10V | 8mOhm @ 52A, 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 3V @ 250µA | 2.5V @ 150µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V | 60 nC @ 5 V | 66 nC @ 4.5 V | 60 nC @ 5 V |
AUIRL3705ZSTRLInternational RectifierMOSFET N-CH 55V 75A D2PAK
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AUIRL1404ZSTRLInfineon TechnologiesMOSFET N-CH 40V 160A D2PAKAUIRL2203NInternational RectifierAUTOMOTIVE N-CHANNEL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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