AUIRFS4610 Tech Spezifikatioune
International Rectifier - AUIRFS4610 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFS4610
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | Automotive, AEC-Q101, HEXFET® | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Bulk | |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 73A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFS4610.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRFS4610 | AUIRFS4410Z | AUIRFS8403 | AUIRFS6535 |
Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | International Rectifier |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 40 V | 300 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V | 120 nC @ 10 V | 93 nC @ 10 V | 57 nC @ 10 V |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4V @ 150µA | 3.9V @ 100µA | 5V @ 150µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 73A (Tc) | 97A (Tc) | 123A (Tc) | 19A (Tc) |
Serie | Automotive, AEC-Q101, HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package protegéieren | Bulk | Bulk | Bulk | Bulk |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V | 9mOhm @ 58A, 10V | 3.3mOhm @ 70A, 10V | 185mOhm @ 11A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 190W (Tc) | 230W (Tc) | 99W (Tc) | 210W (Tc) |
Supplier Device Package | D2PAK | D2PAK | PG-TO263-3 | PG-TO263-3 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V | 4820 pF @ 50 V | 3183 pF @ 25 V | 2340 pF @ 25 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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