AUIRFS3806 Tech Spezifikatioune
International Rectifier - AUIRFS3806 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFS3806
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 50µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V | |
Power Dissipation (Max) | 71W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 43A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFS3806.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRFS3806 | AUIRFS3306TRL | AUIRFS4010TRL | AUIRFS3607 |
Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | International Rectifier |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 75 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 43A (Tc) | 120A (Tc) | 180A (Tc) | 80A (Tc) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
Vgs (th) (Max) @ Id | 4V @ 50µA | 4V @ 150µA | 4V @ 250µA | 4V @ 100µA |
Power Dissipation (Max) | 71W (Tc) | 230W (Tc) | 375W (Tc) | 140W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V | 4520 pF @ 50 V | 9575 pF @ 50 V | 3070 pF @ 50 V |
Supplier Device Package | PG-TO263-3 | D2PAK | PG-TO263-3 | PG-TO263-3 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V | 4.2mOhm @ 75A, 10V | 4.7mOhm @ 106A, 10V | 9mOhm @ 46A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 125 nC @ 10 V | 215 nC @ 10 V | 84 nC @ 10 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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