AUIRFR4105 Tech Spezifikatioune
International Rectifier - AUIRFR4105 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFR4105
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V | |
Power Dissipation (Max) | 68W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFR4105.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRFR4105 | AUIRFR3806TRL | AUIRFR4292 | AUIRFR4615TRL |
Hiersteller | International Rectifier | Infineon Technologies | International Rectifier | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 68W (Tc) | 71W (Tc) | 100W (Tc) | 144W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | 30 nC @ 10 V | 20 nC @ 10 V | 26 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 43A (Tc) | 9.3A (Tc) | 33A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 50µA | 5V @ 50µA | 5V @ 100µA |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | 1150 pF @ 50 V | 705 pF @ 25 V | 1750 pF @ 50 V |
Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V | 15.8mOhm @ 25A, 10V | 345mOhm @ 5.6A, 10V | 42mOhm @ 21A, 10V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 250 V | 150 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | D-Pak | D-PAK (TO-252AA) | DPAK | D-PAK (TO-252AA) |
Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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