AUIRF2804S-7P Tech Spezifikatioune
International Rectifier - AUIRF2804S-7P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRF2804S-7P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK (7-Lead) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 160A, 10V | |
Power Dissipation (Max) | 330W (Tc) | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 240A (Tc) | |
Basis Produktnummer | AUIRF2804 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRF2804S-7P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRF2804S-7P | AUIRF1405ZSTRL | AUIRF2804L | AUIRF2805 |
Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | International Rectifier |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tube | Bulk |
Entworf fir Source Voltage (Vdss) | 40 V | 55 V | 40 V | 55 V |
Power Dissipation (Max) | 330W (Tc) | 230W (Tc) | 300W (Tc) | 330W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 25 V | 4780 pF @ 25 V | 6450 pF @ 25 V | 5110 pF @ 25 V |
Basis Produktnummer | AUIRF2804 | AUIRF1405 | AUIRF2804 | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 180 nC @ 10 V | 240 nC @ 10 V | 230 nC @ 10 V |
Supplier Device Package | D2PAK (7-Lead) | D2PAK | TO-262 | TO-220AB |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 160A, 10V | 4.9mOhm @ 75A, 10V | 2mOhm @ 75A, 10V | 4.7mOhm @ 104A, 10V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 240A (Tc) | 150A (Tc) | 195A (Tc) | 75A (Tc) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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