2N7002DW L6327 Tech Spezifikatioune
Infineon Technologies - 2N7002DW L6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - 2N7002DW L6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT363-PO | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V | |
| Power - Max | 500mW | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | 2N7002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies 2N7002DW L6327.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | 2N7002DW L6327 | 2N7002DW-7-G | 2N7002DW | 2N7002DW-7-F |
| Hiersteller | Infineon Technologies | Diodes Incorporated | Yangjie Technology | Diodes Incorporated |
| Konfiguratioun | 2 N-Channel (Dual) | - | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Serie | OptiMOS™ | * | - | - |
| Power - Max | 500mW | - | 300mW | 310mW |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | - | 2.5V @ 250µA | 2V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | - | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA | - | 340mA | 230mA |
| Basis Produktnummer | 2N7002 | 2N7002 | 2N7002 | 2N7002 |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V | - | 50pF @ 25V | 50pF @ 25V |
| Entworf fir Source Voltage (Vdss) | 60V | - | 60V | 60V |
| Supplier Device Package | PG-SOT363-PO | - | SOT-363 | SOT-363 |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | Logic Level Gate | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V | - | 2.5Ohm @ 300mA, 10V | 7.5Ohm @ 50mA, 5V |
Eroflueden 2N7002DW L6327 PDF DataDhusts an Infineon Technologies Dokumentatioun fir 2N7002DW L6327 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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