US1M-HF Tech Spezifikatioune
Comchip Technology - US1M-HF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Comchip Technology - US1M-HF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Comchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.65 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AC (SMA) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 75 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AC, SMA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | |
| Basis Produktnummer | US1M |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Comchip Technology US1M-HF.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | US1M-HF | US1M-M3/61T | US1M-M3/5AT | US1M-TP |
| Hiersteller | Comchip Technology | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Micro Commercial Co |
| Supplier Device Package | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 10 µA @ 1000 V | 10 µA @ 1000 V | 10 µA @ 1000 V |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | 10pF @ 4V, 1MHz | - | 10pF @ 4V, 1MHz |
| Package / Case | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 175°C |
| Basis Produktnummer | US1M | US1 | US1M | US1M |
| Technologie | Standard | Standard | Standard | Standard |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | 1000 V | 1000 V |
| Reverse Recovery Time (trr) | 75 ns | 75 ns | - | 100 ns |
| Voltage - Viru (Vf) (Max) @ Wann | 1.65 V @ 1 A | 1.7 V @ 1 A | 1.7 V @ 1 A | 1.4 V @ 2 A |
Eroflueden US1M-HF PDF DataDhusts an Comchip Technology Dokumentatioun fir US1M-HF - Comchip Technology.
US1M-M3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214AC
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US1M-FLITEONUS1M-M3/5ATVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214ACUS1M-TPMicro Commercial CoDIODE GEN PURP 1KV 1A DO214ACUS1M-TGWILLASUS1M-R1-10001PANJITUS1M-R1PANJITUS1M-TP-HFMicro Commercial CoInterfaceUS1M-E3/61T/RS1MElectro-Films (EFI) / VishayUS1M-E3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO214ACUS1M-E3Electro-Films (EFI) / VishayUS1M-E3/61Electro-Films (EFI) / VishayUS1M-E3-61TElectro-Films (EFI) / Vishay
US1M-7-FDiodes IncorporatedUS1M-R1-00101PANJITUS1M-13-F-73Diodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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