2N3250 Tech Spezifikatioune
Central Semiconductor - 2N3250 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Central Semiconductor - 2N3250
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Central Semiconductor | |
Voltage - Collector Emitter Breakdown (Max) | 40V | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | |
Transistor Type | PNP | |
Supplier Device Package | TO-18 | |
Serie | - | |
Power - Max | 360mW | |
Verpakung | Bulk | |
Package / Case | TO-206AA, TO-18-3 Metal Can | |
Aner Names | 2N3250 LEAD FREE 2N3250 PBFREE |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | |
Fabrik Standard Lead Time | 16 Weeks | |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | |
Frequenz - Iwwergang | 250MHz | |
Detailbeschreiwung | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 360mW Through Hole TO-18 | |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 1V | |
Aktuell - Kollektorat Cutoff (Max) | - | |
Aktuell - Sammler (Ic) (Max) | 200mA |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Central Semiconductor 2N3250.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | 2N3250 | 2N3302 | 2N3117 | 2N3250A |
Hiersteller | Central Semiconductor | Microchip Technology | Central Semiconductor | Microchip Technology |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | - | Lead free / RoHS Compliant | - |
Aktuell - Sammler (Ic) (Max) | 200mA | - | 50mA | 200 mA |
Mounting Type | Through Hole | - | Through Hole | Through Hole |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | - | 1 (Unlimited) | - |
Detailbeschreiwung | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 360mW Through Hole TO-18 | - | Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18 | - |
Package / Case | TO-206AA, TO-18-3 Metal Can | - | TO-206AA, TO-18-3 Metal Can | TO-205AD, TO-39-3 Metal Can |
Frequenz - Iwwergang | 250MHz | - | - | - |
Fabrik Standard Lead Time | 16 Weeks | - | 16 Weeks | - |
Serie | - | * | - | - |
Supplier Device Package | TO-18 | - | TO-18 | TO-39 (TO-205AD) |
Aktuell - Kollektorat Cutoff (Max) | - | - | 10nA (ICBO) | 10µA (ICBO) |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | - | 350mV @ 100µA, 1mA | 500mV @ 5mA, 50mA |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 1V | - | 250 @ 10µA, 5V | 50 @ 10mA, 1V |
Voltage - Collector Emitter Breakdown (Max) | 40V | - | 60V | 60 V |
Operatioun Temperatur | -65°C ~ 200°C (TJ) | - | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
Transistor Type | PNP | - | NPN | PNP |
Aner Names | 2N3250 LEAD FREE 2N3250 PBFREE |
- | 2N3117 LEAD FREE 2N3117 PBFREE |
- |
Verpakung | Bulk | - | Bulk | - |
Power - Max | 360mW | - | 360mW | 360 mW |
Eroflueden 2N3250 PDF DataDhusts an Central Semiconductor Dokumentatioun fir 2N3250 - Central Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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