BUZ41A Tech Spezifikatioune
Harris Corporation - BUZ41A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - BUZ41A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V | |
| Power Dissipation (Max) | 75W (Tc) | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation BUZ41A.
| Produktiounsattriff | |
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|
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|---|---|---|---|---|
| Part Number | BUZ41A | BUZ355 | BUZ50A | BUZ71A |
| Hiersteller | Harris Corporation | Infineon Technologies | Solid State Inc. | STMicroelectronics |
| Mounting Type | Through Hole | - | Through Hole | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
| Package / Case | TO-220-3 | - | TO-220-3 | - |
| Serie | - | * | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) | - | - | - |
| FET Typ | N-Channel | - | N-Channel | - |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 1mA | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V | - | - | - |
| Supplier Device Package | TO-220AB | - | TO-220 | - |
| Power Dissipation (Max) | 75W (Tc) | - | - | - |
| Entworf fir Source Voltage (Vdss) | 500 V | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | - |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | - |
BUZ71ASTMicroelectronicsBUZ50CCypress Semiconductor (Infineon Technologies)BUZ355Infineon TechnologiesN-CHANNEL POWER MOSFETBUZ356Cypress Semiconductor (Infineon Technologies)BUZ41A E3044ASiemensBUZ57ASiemensIGBT ModuleBUZ40BCypress Semiconductor (Infineon Technologies)BUZ50ASolid State Inc.TO 220 HV N-CHANNEL MOSFETBUZ53ASSTBUZ358BUZ385Cypress Semiconductor (Infineon Technologies)BUZ357Cypress Semiconductor (Infineon Technologies)BUZ380SiemensBUZ50BCypress Semiconductor (Infineon Technologies)BUZ384NOIGBT ModuleBUZ382BUZ58ASiemensIGBT ModuleBUZ61ACypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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