AOW2918 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOW2918 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOW2918
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.1W (Ta), 267W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta), 90A (Tc) | |
Basis Produktnummer | AOW29 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOW2918.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOW2918 | AOW292 | AOW25S65 | AOW290 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Basis Produktnummer | AOW29 | AOW29 | AOW25 | AOW29 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | - | - | aMOS™ | - |
Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V | 4.1mOhm @ 20A, 10V | 190mOhm @ 12.5A, 10V | 3.2mOhm @ 20A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 2.1W (Ta), 267W (Tc) | 1.9W (Ta), 300W (Tc) | 357W (Tc) | 1.9W (Ta), 500W (Tc) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | 126 nC @ 10 V | 26.4 nC @ 10 V | 126 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta), 90A (Tc) | 14.5A (Ta), 105A (Tc) | 25A (Tc) | 17.5A (Ta), 140A (Tc) |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | 3.4V @ 250µA | 4V @ 250µA | 4.1V @ 250µA |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 650 V | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 50 V | 6775 pF @ 50 V | 1278 pF @ 100 V | 7180 pF @ 50 V |
Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
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Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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