AOTF4N60 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOTF4N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOTF4N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V | |
Power Dissipation (Max) | 35W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | AOTF4 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOTF4N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOTF4N60 | AOTF454L | AOTF4N90 | AOTF450L |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 7V, 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 25 V | 985 pF @ 75 V | 880 pF @ 25 V | 235 pF @ 25 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.6V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA |
Package protegéieren | Tube | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 600 V | 150 V | 900 V | 200 V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Supplier Device Package | TO-220F | TO-220F | TO-220F | TO-220F |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 3A (Ta), 13A (Tc) | 4A (Tc) | 5.8A (Tc) |
Basis Produktnummer | AOTF4 | AOTF454 | AOTF4 | AOTF450 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 20 nC @ 10 V | 22 nC @ 10 V | 4.4 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V | 94mOhm @ 10A, 10V | 3.6Ohm @ 2A, 10V | 700mOhm @ 2.9A, 10V |
Power Dissipation (Max) | 35W (Tc) | 2.1W (Ta), 41W (Tc) | 37W (Tc) | 27W (Tc) |
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