AOTF29S50L Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOTF29S50L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOTF29S50L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F | |
Serie | aMOS™ | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V | |
Power Dissipation (Max) | 37.9W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 29A (Tc) | |
Basis Produktnummer | AOTF29 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOTF29S50L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOTF29S50L | AOTF2N60 | AOTF298L | AOTF3N100 |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V | 325 pF @ 25 V | 1670 pF @ 15 V | 830 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | 4.5V @ 250µA | 4.1V @ 250µA | 4.5V @ 250µA |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | aMOS™ | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V | 11.4 nC @ 10 V | 27 nC @ 10 V | 20 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 500 V | 600 V | 100 V | 1000 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-220F | TO-220F | TO-220F | TO-220F |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 29A (Tc) | 2A (Tc) | 9A (Ta), 33A (Tc) | 2.8A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | AOTF29 | AOTF298 | AOTF298 | AOTF3 |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Power Dissipation (Max) | 37.9W (Tc) | 31W (Tc) | 2.1W (Ta), 33W (Tc) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V | 4.4Ohm @ 1A, 10V | 14.5mOhm @ 20A, 10V | 6Ohm @ 1.5A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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