AOT3N100 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOT3N100 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOT3N100
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 10V | |
Power Dissipation (Max) | 132W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Tc) | |
Basis Produktnummer | AOT3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOT3N100.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOT3N100 | AOT3N60 | AOT3N50 | AOT380A60L |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Serie | - | - | - | aMOS5™ |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Tc) | 2.5A (Tc) | 3A (Tc) | 11A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V | 370 pF @ 25 V | 331 pF @ 25 V | 955 pF @ 100 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 10V | 3.5Ohm @ 1.25A, 10V | 3Ohm @ 1.5A, 10V | 380mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 132W (Tc) | 83W (Tc) | 74W (Tc) | 131W (Tc) |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Basis Produktnummer | AOT3 | AOT3 | AOT3 | AOT380 |
Entworf fir Source Voltage (Vdss) | 1000 V | 600 V | 500 V | 600 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 12 nC @ 10 V | 8 nC @ 10 V | 20 nC @ 10 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA | 3.8V @ 250µA |
Eroflueden AOT3N100 PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOT3N100 - Alpha & Omega Semiconductor Inc..
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