AOT11S65L Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOT11S65L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOT11S65L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | aMOS™ | |
Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 198W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | AOT11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOT11S65L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOT11S65L | AOT12N60 | AOT11N60L | AOT12N40L |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V | 550mOhm @ 6A, 10V | 650mOhm @ 5.5A, 10V | 590mOhm @ 6A, 10V |
Power Dissipation (Max) | 198W (Tc) | 278W (Tc) | 272W (Tc) | 184W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Basis Produktnummer | AOT11 | AOT12 | AOT11 | AOT12 |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 600 V | 400 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 12A (Tc) | 11A (Tc) | 11A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V | 2100 pF @ 25 V | 1990 pF @ 25 V | 1110 pF @ 25 V |
Serie | aMOS™ | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V | 50 nC @ 10 V | 37 nC @ 10 V | 21 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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