AOT1100L Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOT1100L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOT1100L
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 3.8V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.1W (Ta), 500W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4833 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Ta), 130A (Tc) | |
Basis Produktnummer | AOT11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOT1100L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOT1100L | AOT11N70 | AOT10T60P | AOT10T60PL |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 3.8V @ 250µA | 4.5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V | 870mOhm @ 5.5A, 10V | 700mOhm @ 5A, 10V | 700mOhm @ 5A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 100 V | 700 V | 600 V | 600 V |
Basis Produktnummer | AOT11 | AOT11 | AOT10 | AOT10 |
Power Dissipation (Max) | 2.1W (Ta), 500W (Tc) | 271W (Tc) | 208W (Tc) | 208W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Ta), 130A (Tc) | 11A (Tc) | 10A (Tc) | 10A (Tc) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Input Capacitance (Ciss) (Max) @ Vds | 4833 pF @ 25 V | 2150 pF @ 25 V | 1595 pF @ 100 V | 1595 pF @ 100 V |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 45 nC @ 10 V | 40 nC @ 10 V | 40 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden AOT1100L PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOT1100L - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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