AON6416 Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AON6416 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AON6416
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-DFN (5x6) | |
Serie | SDMOS™ | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.4W (Ta), 31W (Tc) | |
Package / Case | 8-PowerSMD, Flat Leads | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 22A (Tc) | |
Basis Produktnummer | AON641 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AON6416.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AON6416 | AON6410 | AON6408L | AON6414A |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±12V | ±20V | ±20V |
Basis Produktnummer | AON641 | AON641 | AON640 | AON641 |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2.4W (Ta), 31W (Tc) | 2W (Ta), 35W (Tc) | 2.4W (Ta), 31W (Tc) | 2.3W (Ta), 31W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 22A (Tc) | 10A (Ta), 24A (Tc) | 14.5A (Ta), 25A (Tc) | 13A (Ta), 30A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | 28 nC @ 10 V | 36 nC @ 10 V | 24 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 15 V | 1452 pF @ 15 V | 1900 pF @ 15 V | 1380 pF @ 15 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V | 12mOhm @ 20A, 10V | 6.5mOhm @ 20A, 10V | 8mOhm @ 20A, 10V |
Serie | SDMOS™ | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | 8-DFN (5x6) | 8-DFN (5x6) | 8-DFN (5x6) | 8-DFN (5x6) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | 8-PowerSMD, Flat Leads | 8-PowerSMD, Flat Leads | 8-PowerSMD, Flat Leads | 8-PowerSMD, Flat Leads |
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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