AOI2N60A Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOI2N60A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOI2N60A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251A | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V | |
Power Dissipation (Max) | 57W (Tc) | |
Package / Case | TO-251-3 Stub Leads, IPak | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -50°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | |
Basis Produktnummer | AOI2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOI2N60A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AOI2N60A | AOI4130 | AOI2N60 | AOI2610E |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Serie | - | - | - | * |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 34 nC @ 10 V | 11 nC @ 10 V | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 6.5A (Ta), 30A (Tc) | 2A (Tc) | - |
Vgs (Max) | ±30V | ±20V | ±30V | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -50°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -50°C ~ 150°C (TJ) | - |
Supplier Device Package | TO-251A | TO-251A | TO-251A | TO-251A |
Power Dissipation (Max) | 57W (Tc) | 2.5W (Ta), 52W (Tc) | 56.8W (Tc) | - |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 2.8V @ 250µA | 4.5V @ 250µA | - |
Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V | 1900 pF @ 30 V | 325 pF @ 25 V | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak |
Entworf fir Source Voltage (Vdss) | 600 V | 60 V | 600 V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V | 24mOhm @ 20A, 10V | 4.4Ohm @ 1A, 10V | - |
Basis Produktnummer | AOI2 | AOI41 | AOI2 | AOI261 |
Eroflueden AOI2N60A PDF DataDhusts an Alpha & Omega Semiconductor Inc. Dokumentatioun fir AOI2N60A - Alpha & Omega Semiconductor Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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