AOB256L Tech Spezifikatioune
Alpha & Omega Semiconductor Inc. - AOB256L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Alpha & Omega Semiconductor Inc. - AOB256L
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Alpha and Omega Semiconductor, Inc. | |
Vgs (th) (Max) @ Id | 2.8V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263 (D2Pak) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 85mOhm @ 10A, 10V | |
Power Dissipation (Max) | 2.1W (Ta), 83W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1165 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta), 19A (Tc) | |
Basis Produktnummer | AOB256 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Alpha & Omega Semiconductor Inc. AOB256L.
Produktiounsattriff | ||||
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Part Number | AOB256L | AOB2606L | AOB2500L | AOB2608L |
Hiersteller | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. | Alpha & Omega Semiconductor Inc. |
Supplier Device Package | TO-263 (D2Pak) | TO-263 (D2Pak) | TO-263 (D2Pak) | TO-263 (D2Pak) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | AOB256 | AOB2606 | AOB2500 | AOB260 |
Rds On (Max) @ Id, Vgs | 85mOhm @ 10A, 10V | 6.2mOhm @ 20A, 10V | 6.2mOhm @ 20A, 10V | 7.6mOhm @ 20A, 10V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Serie | - | - | - | - |
Vgs (th) (Max) @ Id | 2.8V @ 250µA | 3.5V @ 250µA | 3.5V @ 250µA | 3.6V @ 250µA |
Power Dissipation (Max) | 2.1W (Ta), 83W (Tc) | 2.1W (Ta), 115W (Tc) | 2.1W (Ta), 375W (Tc) | 2.1W (Ta), 100W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1165 pF @ 75 V | 4050 pF @ 30 V | 6460 pF @ 75 V | 2995 pF @ 30 V |
Entworf fir Source Voltage (Vdss) | 150 V | 60 V | 150 V | 60 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta), 19A (Tc) | 13A (Ta), 72A (Tc) | 11.5A (Ta), 152A (Tc) | 11A (Ta), 72A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 75 nC @ 10 V | 136 nC @ 10 V | 55 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 6V, 10V | 10V |
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Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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