FDN5632N-F085 Tech Spezifikatioune
onsemi - FDN5632N-F085 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDN5632N-F085
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | Automotive, AEC-Q101, PowerTrench® | |
Rds On (Max) @ Id, Vgs | 82mOhm @ 1.7A, 10V | |
Power Dissipation (Max) | 1.1W (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Ta) | |
Basis Produktnummer | FDN5632 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDN5632N-F085.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDN5632N-F085 | FDN5630 | FDN8601 | FDN86246 |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 15 V | 400 pF @ 15 V | 210 pF @ 50 V | 225 pF @ 75 V |
Power Dissipation (Max) | 1.1W (Ta) | 500mW (Ta) | 1.5W (Ta) | 1.5W (Ta) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 150 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 82mOhm @ 1.7A, 10V | 100mOhm @ 1.7A, 10V | 109mOhm @ 1.5A, 10V | 261mOhm @ 1.6A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Ta) | 1.7A (Ta) | 2.7A (Ta) | 1.6A (Ta) |
Basis Produktnummer | FDN5632 | FDN563 | FDN860 | FDN862 |
Supplier Device Package | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Serie | Automotive, AEC-Q101, PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 10 nC @ 10 V | 5 nC @ 10 V | 5 nC @ 10 V |
Eroflueden FDN5632N-F085 PDF DataDhusts an onsemi Dokumentatioun fir FDN5632N-F085 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.