SVD5865NLT4G Tech Spezifikatioune
onsemi - SVD5865NLT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - SVD5865NLT4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK-3 | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 19A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 71W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 46A (Tc) | |
| Basis Produktnummer | SVD5865 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi SVD5865NLT4G.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | SVD5865NLT4G | SVD5867NLT4G | SVD5804NT4G | SVD4N60F |
| Hiersteller | onsemi | onsemi | AMI Semiconductor/onsemi | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | 675 pF @ 25 V | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 19A, 10V | 39mOhm @ 11A, 10V | - | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | - | - |
| Supplier Device Package | DPAK-3 | DPAK-3 | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 15 nC @ 10 V | - | - |
| Power Dissipation (Max) | 3.1W (Ta), 71W (Tc) | 3.3W (Ta), 43W (Tc) | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 46A (Tc) | 22A (Tc) | - | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.5V @ 250µA | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Basis Produktnummer | SVD5865 | SVD5867 | - | - |
| Serie | Automotive, AEC-Q101 | - | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
Eroflueden SVD5865NLT4G PDF DataDhusts an onsemi Dokumentatioun fir SVD5865NLT4G - onsemi.
| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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